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When designing circuits it is an important question how to select various parameters of a MOSFET, like $W$, $L$, or the bias current $I_\mathrm{D}$. As a very practical approach we select the $g_\mathrm{m}/I_\mathrm{D}$ methodoloy introduced by B. Murmann [@Jespers_Murmann_2017]. A brief introduction is available [here](https://github.com/iic-jku/analog-circuit-design/blob/main/sizing/Ref_Murmann_gmID.pdf) as well. | ||
When designing circuits it is an important question how to select various parameters of a MOSFET, like $W$, $L$, or the bias current $I_\mathrm{D}$. As a very practical approach we select the $g_\mathrm{m}/I_\mathrm{D}$ methodoloy introduced by P. Jespers and B. Murmann in [@Jespers_Murmann_2017]. A brief introduction is available [here](https://github.com/iic-jku/analog-circuit-design/blob/main/sizing/Ref_Murmann_gmID.pdf) as well. | ||
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{{< include figures/_fig_nmos_gmid_vs_ft.qmd >}} | ||
{{< include figures/_fig_pmos_gmid_vs_ft.qmd >}} |